参数资料
型号: PHP125
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: P-channel enhancement mode MOS transistor(P沟道增强型MOS晶体管)
中文描述: 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封装: PLASTIC, SO-8
文件页数: 2/12页
文件大小: 105K
代理商: PHP125
1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP125
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.
PINNING - SO8 (SOT96-1)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
n.c.
s
s
g
d
d
d
d
not connected
source
source
gate
drain
drain
drain
drain
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM115
1
4
5
8
d
d
d
s
n.c.
g
s
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
1.6
±
20
2.8
2.5
0.25
2.8
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
V
V
V
V
A
W
I
S
=
1.25 A
I
D
=
1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
=
1 A; V
GS
=
10 V
T
s
= 80
°
C
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