参数资料
型号: PHP55N03T
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管)
中文描述: 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 5/8页
文件大小: 57K
代理商: PHP55N03T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP55N03T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
0
20
40
60
80
7518-30
VGS / V
ID / A
Tj / C = 25
175
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
20
40
ID / A
60
80
0
5
10
15
20
25
7518-30
gfs / S
Tj / C = 25
175
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0.1
1
10
100
100
1000
10000
7518-30
VDS / V
C / pF
Ciss
Coss
Crss
September 1997
5
Rev 1.100
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