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参数资料
| 型号： | PHU101NQ03LT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 75 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | PLASTIC, TO-251, IPAK-3 |
| 文件页数： | 13/13页 |
| 文件大小： | 279K |
| 代理商： | PHU101NQ03LT |
Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 25 February 2003
Document order number: 9397 750 10927
Contents
Philips Semiconductors
PHP/PHU101NQ03LT
TrenchMOS logic level FET
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information
. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data
. . . . . . . . . . . . . . . . . . . . . 2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics
. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance. . . . . . . . . . . . . . 4
Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . . 12
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
相关PDF资料 |
PDF描述 |
|---|---|
| PHP109 | P-channel enhancement mode MOS transistor(P沟道增强型MOS晶体管) |
| PHP11N06LT | N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) |
| PHD11N06LT | N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) |
| PHP125N06L | TrenchMOS transistor Logic level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHB125N06L | TrenchMOS transistor Logic level FET(TrenchMOS 晶体管逻辑电平FET) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHU101NQ03LT,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHU-102S | 制造商:Citizen Systems America Corporation 功能描述:Paper Handling Unit for PMU2300? (102 mm), Side |
| PHU108NQ03LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHU108NQ03LT,127 | 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHU11NQ10T | 制造商:NXP Semiconductors 功能描述:MOSFET N I-PAK |
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