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参数资料
| 型号： | PHB125N06L |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Logic level FET(TrenchMOS 晶体管逻辑电平FET) |
| 中文描述： | TrenchMOS场效应晶体管逻辑电平（TrenchMOS晶体管逻辑电平场效应管） |
| 文件页数： | 1/9页 |
| 文件大小： | 71K |
| 代理商： | PHB125N06L |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP125N06LT, PHB125N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
8 m
(V
GS
= 5 V)
R
DS(ON)
≤
7 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB125N06LT is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
75
75
240
250
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
March 1998
1
Rev 1.400
相关PDF资料 |
PDF描述 |
|---|---|
| PHP125N06LT | TrenchMOS transistor Logic level FET |
| PHP125N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHP125 | P-channel enhancement mode MOS transistor(P沟道增强型MOS晶体管) |
| PHP130N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHP13N40E | PowerMOS transistors Avalanche energy rated |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHB125N06LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHB125N06T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB125N06TT/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB129NQ04LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB129NQ04LT /T3 | 功能描述:MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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