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| 型号： | PI2007-EVAL1 |
| 厂商： | Vicor Corporation |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | EVAL BRD FOR PI2007 48V/6A |
| 产品培训模块： | Cool-ORing? Series |
| 标准包装： | 1 |
| 系列： | Picor®, Cool-ORing® |
| 主要目的： | 电源管理，O 环控制器/负荷分载 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | PI2007 |
| 已供物品： | 板 |
| 其它名称： | 1102-1057 |
?
Where:
I PEAK :
Peak current in the MOSFET right before it
is turned off.
Trise MOSFET ? Rth JA ? Pd MOSFET ? Rth JA ? Is 2 ? R DS ( on ) ,
Where:
V S :
Input voltage or load voltage at MOSFET
Rth JA :
Junction-to-Ambient thermal resistance
source before input short condition did
occur.
R DS(on) and PI2007 sensing:
t RVS :
Reverse fault to MOSFET turn-off time. This
The PI2007 senses the MOSFET source-to-drain
will include PI2007 delay and the MOSFET
turn off time.
L PARASITIC : Circuit parasitic inductance
And the MOSFET avalanche energy during an input
short is calculated as follows:
voltage drop via the SP and SN pins to determine the
status of the current through the MOSFET. When the
MOSFET is fully enhanced, its source-to-drain voltage
is equal to the MOSFET on-state resistance multiplied
by the source current, V SD = R DS(on) *Is. The reverse
current threshold is set for -6mV and when the
differential voltage between the SP & SN pins is more
2 * 1 . 3 V ( BR ) DSS ? V S
E AS ?
*
1 1 . 3 * V ( BR ) DSS
* L PARASITIC * I PEAK
2
negative than -6mV, i.e. SP-SN ? -6mV, the PI2007
detects a reverse current fault condition and pulls the
MOSFET gate pin low, thus turning off the MOSFET
Where:
and preventing further reverse current. The reverse
current fault protection disconnects the power source
E AS :
Avalanche energy
fault condition from the redundant bus, and allows the
system to keep running.
V ( BR ) DSS : MOSFET breakdown voltage
MOSFET R DS(on) and maximum steady state power
dissipation are closely related. Generally the lower the
MOSFET R DS(on) , the higher the current capability and
the lower the resultant power dissipation. This leads to
reduced thermal management overhead, but will
ultimately be higher cost compared to higher R DS(on)
parts. It is important to understand the primary design
goal objectives for the application in order to
effectively trade off the performance of one MOSFET
versus another.
Power dissipation in active ORing circuits is derived
from the total source current and the on-state
resistance of the selected MOSFET .
MOSFET power dissipation:
Pd MOSFET ? Is 2 ? R DS ( on )
Where :
Is :
Source Current
R DS(on) : MOSFET on-state resistance
Note:
In the calculation use R DS(on) at maximum MOSFET
temperature because
R DS(on)
is temperature
dependent. Refer to the normalized R DS(on) curves in
the MOSFET manufacturers datasheet. Some
MOSFET R DS(on) values may increase by 50% at
125°C compared to values at 25°C.
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
Picor Corporation ? picorpower.com
PI2007
Rev 1.3
Page 12 of 19
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