参数资料
| 型号： | PI2127-EVAL1 |
| 厂商： | Vicor Corporation |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | EVAL BRD FOR PI2127 60V/12A |
| 产品培训模块： | Cool-ORing? Series |
| 标准包装： | 1 |
| 系列： | Picor®, Cool-ORing® |
| 主要目的： | 电源管理，O 环控制器/负荷分载 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | PI2127 |
| 已供物品： | 板 |
| 其它名称： | 1102-1060 |
?
At maximum response time:
From the BC846 datasheet:
I PEAK =
=
= 112 . 5 A
E AS =
1 1 . 3 * BV DSS
V S * t RVS 45 V * 150 ns
L PARASITIC 60 nH
Avalanche Energy:
* * L PARASITIC * I PEAK
2 1 . 3 * BV DSS ? V S
2
NPN general-purpose transistor
V CEO = 65V Collector-Emitter maximum voltage
I C = 100mA maximum collector current
h FE = 110 minimum at I C =2mA
V BE = 0.580V to 0.70V Base-Emitter voltage
at I C = 2mA and 25°C
R θ J-A = 500°C/W Junction to ambient thermal
resistance.
Select Zener Diode: A Zener diode with low bias
*
E AS
=
1 1 . 3 * 60
2 1 . 3 * 60 V ? 45 V
* 60 nH * 112 . 5 A 2 = 897 μ J
current and V Z =10 in small foot print is suitable for this
application. An exemplary Zener diode is the
MM3Z10VST1 the from ON Semiconductor
The avalanche energy is well below the total MOSFET
specified peak current of 150A for 300ns and below
the rated avalanche energy. The specified energy
can be calculated from Single Pulse Avalanche
Current as specified in the Absolute Maximum Ratings
table:
From the MM3Z10VST1 datasheet:
10V, 200mW Zener Diode
V Z = 9.80V to 10.2V Zener voltage range
I R = 10 μ A will hold the Zener breakdown voltage
at 9.8V
? 1 . 3 * BV DSS ? I AS ? t AV = 1 . 3 ? 60 V ? 33 A ? 11 μ s = 14 mJ
1
2
1
2
V Z _ MIN ? V BE ( on )
R LIMIT =
I VC _ MAX
Or 4.32k ? 1%
=
9 . 8 V ? 0 . 7 V
2 . 1 mA
= 4 . 33 k Ω
I B _ MAX =
I C _ MAX
h FE _ MIN
=
3 mA
110
= 27 . 27 μ A
R Z Calculation:
Use 120 μ A as minimum for the Zener diode reverse
leakage current and Q2 base current combined.
R Z =
V in _ MIN ? V Z _ MAX
I Z + I B _ MAX
=
40 V ? 10 . 2 V
120 μ A
= 248 k Ω
Select R Z = 249k ? 1%
Maximum Q1 collector current:
Figure 23 : Two PI2127 in High Side ORing
I C _ MAX =
V Z _ MAX ? V BE _ MIN
R LIMIT _ MIN
=
10 . 2 V ? 0 . 50 V
4 . 32 k Ω * 0 . 98
= 2 . 29 mA
configuration
Maximum Q2 power dissipation
VC bias through Constant current circuit
Select an NPN transistor with V CEO equal or higher
than the input voltage (Vin) plus any expected
transient voltage and capable of handling the
expected maximum power dissipation. Any NPN
Pd Q 1 = I C _ MAX * [ Vin MAX ? V VC ? CLM ? ( V Z _ MIN ? V EB _ MAX )]
Pd Q 1 = 2 . 29 mA * [ 45 V ? 11 V ? ( 9 . 8 V ? 0 . 7 V )] = 57 mW
transistor with V CEO ≥ 60V in a small footprint is
suitable. An exemplary NPN is the BC846 from NXP
Semiconductors:
Transistor temperature rise
T RISEQ 1 = Pd Q 1 * R θ J ? A = 57 mW * 500
° C
W
= 28 . 50 ° C
Picor Corporation ? picorpower.com
PI2127
Rev 1.3
Page 15 of 19
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