参数资料
型号: PIC12F683T-E/SN
厂商: Microchip Technology
文件页数: 27/176页
文件大小: 0K
描述: IC MCU FLASH 2KX14 8SOIC
产品培训模块: Asynchronous Stimulus
Digi-Key 应用说明: AN0005 PWM Example with Microchip's CCP Module
AN0005 Example Code
标准包装: 3,300
系列: PIC® 12F
核心处理器: PIC
芯体尺寸: 8-位
速度: 20MHz
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 5
程序存储器容量: 3.5KB(2K x 14)
程序存储器类型: 闪存
EEPROM 大小: 256 x 8
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 2 V ~ 5.5 V
数据转换器: A/D 4x10b
振荡器型: 内部
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
配用: AC162058-ND - HEADER MPLAB ICD2 FOR PIC12F683
I3-DB12F683-ND - BOARD DAUGHTER ICEPIC3
PIC12F683
DS41211D-page 120
2007 Microchip Technology Inc.
15.4
DC Characteristics:
PIC12F683-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min
Typ
Max
Units
Conditions
VDD
Note
D020E
Power-down Base
Current (IPD)(2)
—0.05
9
μA
2.0
WDT, BOR, Comparators, VREF and
T1OSC disabled
—0.15
11
μA3.0
—0.35
15
μA5.0
D021E
1
17.5
μA
2.0
WDT Current(1)
—2
19
μA3.0
—3
22
μA5.0
D022E
42
65
μA
3.0
BOR Current(1)
—85
127
μA5.0
D023E
32
45
μA
2.0
Comparator Current(1), both
comparators enabled
—60
78
μA3.0
—120
160
μA5.0
D024E
30
70
μA2.0
CVREF Current(1) (high range)
—45
90
μA3.0
—75
120
μA5.0
D025E*
39
91
μA2.0
CVREF Current(1) (low range)
—59
117
μA3.0
—98
156
μA5.0
D026E
4.5
25
μA
2.0
T1OSC Current(1), 32.768 kHz
—5
30
μA3.0
—6
40
μA5.0
D027E
0.30
12
μA
3.0
A/D Current(1), no conversion in
progress
—0.36
16
μA5.0
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral
Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
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