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参数资料
型号： PIC16LF628T-04/SS
厂商： Microchip Technology
文件页数： 38/170页
文件大小： 0K
描述： IC MCU FLASH 2KX14 COMP 20SSOP
产品培训模块： Asynchronous Stimulus
标准包装： 1,600
系列： PIC® 16F
核心处理器： PIC
芯体尺寸： 8-位
速度： 4MHz
连通性： UART/USART
外围设备： 欠压检测/复位，POR，PWM，WDT
输入/输出数： 16
程序存储器容量： 3.5KB（2K x 14）
程序存储器类型： 闪存
EEPROM 大小： 128 x 8
RAM 容量： 224 x 8
电压 - 电源 (Vcc/Vdd)： 2 V ~ 5.5 V
振荡器型： 内部
工作温度： 0°C ~ 70°C
封装/外壳： 20-SSOP（0.209"，5.30mm 宽）
包装： 带卷 (TR)
PIC16F62X
DS40300C-page 130
Preliminary
2003 Microchip Technology Inc.
17.1
DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)
PIC16F62X-20 (Commercial, Industrial, Extended)
PIC16LF62X-04 (Commercial, Industrial)
PIC16LF62X-04
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial
PIC16F62X-04
PIC16F62X-20
(Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial and
-40
°C ≤ Ta ≤ +125°C for extended
Param
No.
Sym
Characteristic/Device
Min
Typ
Max
Units
Conditions
V
DD
Supply Voltage
D001
PIC16LF62X
2.0
—
5.5
V
D001
PIC16F62X
3.0
—
5.5
V
D002
V
DR
RAM Data Retention
Voltage(1)
—
1.5
—
V
Device in SLEEP mode*
D003
V
POR
V
DD Start Voltage
to ensure Power-on Reset
—V
SS
—
V
See section on Power-on Reset
for details
D004
S
VDD
V
DD Rise Rate
to ensure Power-on Reset
0.05
—
V/ms
See section on Power-on Reset
for details*
D005
V
BOD
Brown-out Detect Voltage
3.65
4.0
—
4.35
4.4
V
BODEN configuration bit is set
BODEN configuration bit is set,
Extended
D010
D013
I
DD
Supply Current(2), (5)
PIC16LF62X
—
0.30
1.10
4.0
3.80
—
20
0.6
2.0
7.0
6.0
2.0
30
mA
A
Fosc = 4.0 MHz, V
DD = 2.0(5)
F
OSC = 4.0 MHz, VDD = 5.5*
Fosc = 20.0 MHz, V
DD = 5.5
Fosc = 20.0 MHz, V
DD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0(6)
F
OSC = 32 kHz, VDD = 2.0
D010
D013
D014
PIC16F62X
—
0.60
1.10
4.0
3.80
—
20
0.7
2.0
7.0
6.0
2.0
30
mA
A
Fosc = 4.0 MHz, V
DD = 3.0
Fosc = 4.0 MHz, V
DD = 5.5*
F
OSC = 20.0 MHz, VDD = 5.5
F
OSC = 20.0 MHz, VDD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0*(6)
F
OSC = 32 kHz, VDD = 3.0*
Legend: Rows with standard voltage device data only are shaded for improved readability.
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25
°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note
1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD,
MCLR = V
DD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or VSS.
4: The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD or IPD measurement.
5: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be estimated by the
formula Ir = V
DD/2REXT (mA) with REXT in k
.
6: Commercial temperature only.
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