参数资料
型号: PIC18F6720-E/PT
厂商: Microchip Technology
文件页数: 62/165页
文件大小: 0K
描述: IC PIC MCU FLASH 64KX16 64TQFP
产品培训模块: Asynchronous Stimulus
标准包装: 160
系列: PIC® 18F
核心处理器: PIC
芯体尺寸: 8-位
速度: 25MHz
连通性: I²C,SPI,UART/USART
外围设备: 欠压检测/复位,LVD,POR,PWM,WDT
输入/输出数: 52
程序存储器容量: 128KB(64K x 16)
程序存储器类型: 闪存
EEPROM 大小: 1K x 8
RAM 容量: 3.75K x 8
电压 - 电源 (Vcc/Vdd): 4.2 V ~ 5.5 V
数据转换器: A/D 12x10b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 64-TQFP
包装: 托盘
配用: MA180020-ND - MODULE PLUG-IN HPC EXPL 18F87J11
R01DS0060EJ0100 Rev.1.00
Page 154 of 168
Sep 13, 2011
RX630 Group
5. Electrical Characteristics
5.12
ROM (Flash Memory for Code Storage) Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),
erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different
addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the
range from one to the minimum number.)
Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.
Table 5.29
ROM (Flash Memory for Code Storage) Characteristics
Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz
≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
NPEC 100 hours
128 bytes
tP128
2.8
28
1
10
ms
4 Kbytes
tP4K
63
140
23
50
ms
16 Kbytes
tP16K
252
560
90
200
ms
Programming time
NPEC > 100 hours
128 bytes
tP128
3.4
33.6
1.2
12
ms
4 Kbytes
tP4K
75.6
168
27.6
60
ms
16 Kbytes
tP16K
302.4
672
108
240
ms
Erasure time
NPEC 100 hours
4 Kbytes
tE4K
50
120
25
60
ms
16 Kbytes
tE16K
200
480
100
240
ms
Erasure time
NPEC > 100 hours
4 Kbytes
tE4K
60
144
30
72
ms
16 Kbytes
tE16K
240
576
120
288
ms
Reprogram/erase cycle*1
NPEC
1000*2
——
Times
Suspend delay time during programming
tSPD
400
120
μs
First suspend delay time during erasing
(in suspend priority mode)
tSESD1
300
120
μs
Second suspend delay time during erasing
(in suspend priority mode)
tSESD2
——
1.7
—1.7
ms
Suspend delay time during erasing
(in erasure priority mode)
tSEED
——
1.7
—1.7
ms
Data hold time*3
tDRP
10
10
Year
FCU reset time
tFCUR
35
35
μs
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