参数资料
型号: PIC18F6720-E/PT
厂商: Microchip Technology
文件页数: 63/165页
文件大小: 0K
描述: IC PIC MCU FLASH 64KX16 64TQFP
产品培训模块: Asynchronous Stimulus
标准包装: 160
系列: PIC® 18F
核心处理器: PIC
芯体尺寸: 8-位
速度: 25MHz
连通性: I²C,SPI,UART/USART
外围设备: 欠压检测/复位,LVD,POR,PWM,WDT
输入/输出数: 52
程序存储器容量: 128KB(64K x 16)
程序存储器类型: 闪存
EEPROM 大小: 1K x 8
RAM 容量: 3.75K x 8
电压 - 电源 (Vcc/Vdd): 4.2 V ~ 5.5 V
数据转换器: A/D 12x10b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 64-TQFP
包装: 托盘
配用: MA180020-ND - MODULE PLUG-IN HPC EXPL 18F87J11
R01DS0060EJ0100 Rev.1.00
Page 155 of 168
Sep 13, 2011
RX630 Group
5. Electrical Characteristics
5.13
E2 Flash Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (over writing is prohibited).
Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the
range from one to the minimum number.)
Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.
Table 5.30
E2 Flash Characteristics
Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz
≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
NPEC 100 hours
2 bytes
tDP2
0.7
6
0.25
2
ms
Programming time
NPEC > 100 hours
2 bytes
tDP2
0.7
6
0.25
2
ms
Erasure time
NPEC 100 hours
32 bytes
tDE32
—4
40
—2
20
ms
Erasure time
NPEC > 100 hours
32 bytes
tDE32
—7
40
—4
20
ms
Blank check time
2 bytes
tDBC2
100
30
μs
Reprogram/erase cycle*1
NDPEC
——
Times
Suspend delay time during programming
tDSPD
250
120
μs
First suspend delay time during erasing
(in suspend priority mode)
tDSESD1
250
120
μs
Second suspend delay time during erasing
(in suspend priority mode)
tDSESD2
500
300
μs
Suspend delay time during erasing
(in erasure priority mode)
tDSEED
500
300
μs
Data hold time*3
tDDRP
10
10
Year
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