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| 型号： | PK40X256VMD100 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 30/78页 |
| 文件大小： | 0K |
| 描述： | IC ARM CORTEX MCU 256K 144-MAP |
| 产品培训模块： | Kinetis® Cortex-M4 Microcontroller Family |
| 标准包装： | 1 |
| 系列： | Kinetis |
| 核心处理器： | ARM? Cortex?-M4 |
| 芯体尺寸： | 32-位 |
| 速度： | 100MHz |
| 连通性： | CAN，EBI/EMI，I²C，IrDA，SDHC，SPI，UART/USART，USB，USB OTG |
| 外围设备： | DMA，I²S，LCD，LVD，POR，PWM，WDT |
| 输入/输出数： | 98 |
| 程序存储器容量： | 256KB（256K x 8） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 4K x 8 |
| RAM 容量： | 64K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.71 V ~ 3.6 V |
| 数据转换器： | A/D 33x16b，D/A 2x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 144-LBGA |
| 包装： | 托盘 |
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Table 23. NVM reliability specifications (continued)
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
tnvmretd1k Data retention after up to 1 K cycles
20
100
—
years
nnvmcycd Cycling endurance
10 K
50 K
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
50
—
years
tnvmretee10 Data retention up to 10% of write endurance
20
100
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree32k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
175 K
1.6 M
6.4 M
50 M
400 M
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
where
Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
36
Freescale Semiconductor, Inc.
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