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参数资料
| 型号： | PM29F004T-70PC |
| 厂商： | PMC-Sierra, Inc. |
| 英文描述： | 4 Megabit (512K X 8) 5.0 Volt-Only CMOS Flash Memory |
| 中文描述： | 4兆位（为512k × 8）5.0伏，只有闪存的CMOS |
| 文件页数： | 1/21页 |
| 文件大小： | 82K |
| 代理商： | PM29F004T-70PC |
FEATURES
Single Power Supply Operation
- 5.0 V ± 10% Read/Program/Erase
High Performance Read
- 70/90 ns access time
Memory Blocks Architecture
- One 16 Kbytes top or bottom Boot Block with
software lockout
- Two 8 Kbytes Parameter Blocks
- One 96 Kbytes Main Block
- Three 128 Kbytes Main Blocks
Automatic Block Erase and Byte Program
-
Typical 12
μ
s/byte programming
- Typical 50 ms block or chip erase
Hardware Data Protection
Data# Polling and Toggle Bit Features
Low Power Consumption
- Typical 15 mA active read current
- Typical 40 mA program/erase current
- Typical 0.1
μ
A CMOS standby current
High Product Endurance
- Guarantee 10,000 program/erase cycles
- Typical 50,000 program/erase cycles
- Minimum 10 years data retention
Industrial Standard Pin-out and Packaging
- 32-pin Plastic DIP
- 32-pin PLCC
Manufactured on 0.30 μm process
GENERAL DESCRIPTION
The Pm29F004 is a 4 Megabit, 5 Volt-only Flash Memory organized as 524,288 bytes of 8 bits each. This
device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt V
power supply
for program and erase operation is not required. The device can be programmed in standard EPROM program-
mers as well.
The 4 Megabit memory array is divided into seven blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes,
and three 128 Kbytes for BIOS and parameters storage. The seven blocks allow users to flexibly make chip erase
or block erase operation. The block erase feature allows a particular block to be erased and reprogrammed
without affecting the data in other blocks. After the device performed chip erase or block erase operation, it can
be reprogrammed on a byte-by-byte basis.
The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible
pin-out and command set. The program operation of Pm29F004 is executed by issuing the program command
code into command register. The internal control logic automatically handles the programming voltage ramp-up
and timing. The erase operation of Pm29F004 is executed by issuing the chip erase or block erase command
code into command register. The internal control logic automatically handles the erase voltage ramp-up and
timing. The preprogramming on the array which has not been programmed is not required before the erase
operation. The device also features Data# Polling and Toggle Bit function, the end of program or erase operation
can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.
The device has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data
security. The boot block can be used to store user secure code. When the lockout feature is enabled, the boot
block is permanently protected from being reprogrammed.
The Pm29F004 is manufactured on PMC’s advanced 0.30 μm, P-FLASH, nonvolatile memory process.
The device is packaged in a 32-pin DIP and PLCC with access time of 70 and 90 ns.
PMC
4 Megabit (512K X 8) 5.0 Volt-only CMOS Flash Memory
Programmable Microelectronics Corp.
Issue Date: November, 2000 Rev:1. 0
PRELIMINARY
Pm29F004
1
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