参数资料
型号: PM75CLB120
厂商: Mitsubishi Electric Corporation
英文描述: FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 平性基地型绝缘包装
文件页数: 3/6页
文件大小: 94K
代理商: PM75CLB120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
20 ~ +100
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-2)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
Table1 : T
C
measurement point of just under the chips.
UP
IGBT
28.3
8.2
2.0
Y
VP
WP
UN
VN
WN
FWDi
28.3
IGBT
65.0
8.2
FWDi
65.0
2.0
IGBT
87.0
8.2
FWDi
87.0
2.0
IGBT
39.3
6.2
FWDi
39.3
4.0
IGBT
54.0
6.2
FWDi
54.0
4.0
IGBT
76.0
6.2
FWDi
76.0
4.0
arm
axis
X
Bottom view
Top view
N
P
B
U
V
W
T
C
(Base plate)
(Unit : mm)
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min.
0.5
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
I
C
= 75A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 75A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 75A
V
CIN
= 0V, Pulsed
(Fig. 1)
V
mA
V
μ
s
Unit
0.21
0.30
0.27
0.39
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-2)
(Note-2)
Symbol
Condition
Unit
Min.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
(Note-1) T
C
measurement point is just under the chips (Bottom view).
If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) T
C
measurement point is as shown below (Top view).
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