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| 型号： | PM75RSK060 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 470UF 20% 35V RAD |
| 中文描述： | 用智能功率模块 |
| 文件页数： | 1/31页 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
6.0 Introduction to Intelligent
Power Modules (IPM)
Mitsubishi Intelligent Power Mod-
ules (IPMs) are advanced hybrid
power devices that combine high
speed, low loss IGBTs with opti-
mized gate drive and protection cir-
cuitry. Highly effective over-current
and short-circuit protection is real-
ized through the use of advanced
current sense IGBT chips that al-
low continuous monitoring of power
device current. System reliability is
further enhanced by the IPM’s inte-
grated over temperature and under
voltage lock out protection. Com-
pact, automatically assembled In-
telligent Power Modules are de-
signed to reduce system size, cost,
and time to market. Mitsubishi
Electric introduced the first full line
of Intelligent Power Modules in No-
vember, 1991. Continuous im-
provements in power chip, packag-
ing, and control circuit technology
have lead to the IPM lineup shown
in Table 6.1.
6.0.1 Third Generation Intelli-
gent Power Modules
Mitsubishi third generation intelli-
gent power module family shown in
Table 6.1 represents the industries
most complete line of IPMs. Since
their original introduction in 1993
the series has been expanded to
include 36 types with ratings rang-
ing from 10A 600V to 800A 1200V.
The power semiconductors used in
these modules are based on the
field proven H-Series IGBT and di-
ode processes. In Table 6.1 the
third generation family has been di-
vided into two groups, the “Low
Profile Series” and “High Power
Series” based on the packaging
technology that is used. The third
generation IPM has been optimized
for minimum switching losses in or-
der to meet industry demands for
acoustically noiseless inverters
with carrier frequencies up to
20kHz. The built in gate drive and
protection has been carefully de-
signed to minimize the components
required for the user supplied inter-
face circuit.
6.0.2 V-Series High Power IPMs
The V-Series IPM was developed
in order to address newly emerging
industry requirements for higher re-
liability, lower cost and reduced
EMI. By utilizing the low inductance
packaging technology developed
for the U-Series IGBT module (de-
scribed in Section 4.1.5) combined
with an advanced super soft free-
wheel diode and optimized gate
drive and protection circuits the V-
Series IPM family achieves im-
proved performance at reduced
cost. The detailed descriptions of
IPM operation and interface re-
quirements presented in Sections
6.1 through 6.8 apply to V-Series
as well as third generation IPMs.
The only exception being that V-
Series IPMs have a unified short
circuit protection function that takes
the place of the separate short cir-
cuit and over current functions de-
scribed in Sections 6.4.4 and 6.4.5.
The unified protection was made
Third Generation Low Profile Series - 600V
PM10CSJ060
10
PM15CSJ060
15
PM20CSJ060
20
PM30CSJ060
30
PM50RSK060
50
PM75RSK060
75
Six IGBTs
Six IGBTs
Six IGBTs
Six IGBTs
Six IGBTs + Brake ckt.
Six IGBTs + Brake ckt.
Third Generation Low Profile Series - 1200V
PM10CZF120
10
PM10RSH120
10
PM15CZF120
15
PM15RSH120
15
PM25RSK120
25
Six IGBTs
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs + Brake ckt.
Six IGBTs + Brake ckt.
Third Generation High Power Series - 600V
PM75RSA060
75
PM100CSA060 100
PM100RSA060 100
PM150CSA060 150
PM150RSA060 150
PM200CSA060 200
PM200RSA060 200
PM200DSA060 200
PM300DSA060 300
PM400DAS060 400
PM600DSA060 600
PM800HSA060 800
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs + Brake ckt.
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
One IGBT
Third Generation High Power Series - 1200V
PM25RSB120
25
PM50RSA120
50
PM75CSA120
75
PM75DSA120
75
PM100CSA120 100
PM100DSA120 100
PM150DSA120 150
PM200DSA120 200
PM300DSA120 300
PM400HSA120 400
PM600HSA120 600
PM800HSA120 800
Six IGBTs + Brake ckt.
Six IGBTs + Brake ckt.
Six IGBTs
Two IGBTs: Half Bridge
Six IGBTs
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
One IGBT
One IGBT
V-Series High Power - 600V
PM75RVA060
PM100CVA060 100
PM150CVA060 150
PM200CVA060 200
PM300CVA060 300
PM400DVA060 400
PM600DVA060 600
75
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs
Six IGBTs
Six IGBTs
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
V-Series High Power - 1200V
PM50RVA120
PM75CVA120
PM100CVA120 100
PM150CVA120 150
PM200DVA120 200
PM300DVA120 300
50
75
Six IGBTs + Brake ckt.
Six IGBTs
Six IGBTs
Six IGBTs
Two IGBTs: Half Bridge
Two IGBTs: Half Bridge
Type Number
Amps Power Circuit
Type Number
Amps Power Circuit
Table 6.1 Mitsubishi Intelligent Power Modules
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
相关PDF资料 |
PDF描述 |
|---|---|
| PM75RSK060 | Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (75 Amperes/600 Volts) |
| PM800HSA060 | CAP,CERAMIC,47NF ,X7R,10%,50V,0805,SMD |
| PM800HSA120 | FLAT-BASE TYPE INSULATED PACKAGE |
| PN2222 | General Purpose Transistors NPN Silicon(NPN通用晶体管) |
| PN2222A | General Purpose Transistors NPN Silicon(NPN通用晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PM75RVA060 | 功能描述:MOD IPM HF 600V 75A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PM75RVA060_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75RVA060_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75-XXXK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT POWER INDUCTORS |
| PM761 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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