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参数资料
| 型号： | PM75RSK060 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 470UF 20% 35V RAD |
| 中文描述： | 用智能功率模块 |
| 文件页数： | 5/31页 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
6.2.1 Maximum Ratings
Symbol
Parameter
Definition
Inverter Part
V
CC
V
CES
±
I
C
±
I
CP
P
C
T
j
Supply Voltage
Collector-Emitter Voltage
Collector-Current
Collector-Current (peak)
Collector Dissipation
Junction Temperature
Maximum DC bus voltage applied between P-N
Maximum off-state collector-emitter voltage at applied control input off signal
Maximum DC collector and FWDi current @ T
j
≤
150
°
C
Maximum peak collector and FWDi current @ T
j
≤
150
°
C
Maximum power dissipation per IGBT switch at T
j
= 25
°
C
Range of IGBT junction temperature during operation
Brake Part
V
R(DC)
I
F
FWDi Reverse Voltage
FWDi Forward Current
Maximum reverse voltage of FWDi
Maximum FWDi DC current at T
j
≤
150
°
C
Control Part
V
D
V
CIN
V
FO
I
FO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Maximum control supply voltage
Maximum voltage between input (I) and ground (C) pins
Maximum voltage between fault output (FO) and ground (C) pins
Maximum sink current of fault output (FO) pin
Total System
V
CC(prot)
Supply Voltage Protected
by OC & SC
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Maximum DC bus voltage applied between P-N with guaranteed OC and SC protection
T
C
Range of allowable case temperature at specified reference point during operation
T
stg
V
iso
Range of allowable ambient temperature without voltage or current
Maximum isolation voltage (AC 60Hz 1 min.) between baseplate and module terminals
(all main and signal terminals externally shorted together)
6.2.2 Thermal Resistance
Symbol
R
th(j-c)
Parameter
Junction to Case
Thermal Resistance
Contact Thermal
Resistance
Definition
Maximum value of thermal resistance between junction and case per switch
R
th(c-f)
Maximum value of thermal resistance between case and fin (heatsink) per IGBT/FWDi pair
with thermal grease applied according to mounting recommendations
6.2.3 Electrical Characteristics
Symbol
Parameter
Definition
Inverter and Brake Part
V
CE
(sat)
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Turn-On Time
FWDi Recovery Time
Turn-On Crossover Time
Turn-Off Time
Turn-Off Crossover Time
Collector-Emitter Cutoff
IGBT on-state voltage at rated collector current under specified conditions
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
FWDi forward voltage at rated current under specified conditions
Inductive load switching times under rated conditions
(See Figure 6.10)
Collector-Emitter current in off-state at V
CE
= V
CES
under specified conditions
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
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