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参数资料
| 型号： | PM75RSK060 |
| 厂商： | POWEREX INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (75 Amperes/600 Volts) |
| 中文描述： | AC MOTOR CONTROLLER, 150 A, DMA25 |
| 封装： | POWER MODULE-25 |
| 文件页数： | 2/31页 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
possible by an advanced RTC
(Real Time Control) current clamp-
ing circuit that eliminates the need
for the over current protection func-
tion. In V-Series IPMs a unified
short circuit protection with a delay
to avoid unwanted operation re-
places the over current and short
circuit modes of the third genera-
tion devices.
6.1 Structure of Intelligent
Power Modules
Mitsubishi Intelligent Power Mod-
ules utilize many of the same field
proven module packaging tech-
nologies used in Mitsubishi IGBT
modules. Cost effective implemen-
tation of the built in gate drive and
protection circuits over a wide
range of current ratings was
achieved using two different pack-
aging techniques. Low power de-
vices use a multilayer epoxy isola-
tion system while medium and high
power devices use ceramic isola-
tion. These packaging technologies
are described in more detail in Sec-
tions 6.1.1 and 6.1.2. IPM are
available in four power circuit con-
figurations, single (H), dual (D), six
pack (C), and seven pack (R).
Table 6.1 indicates the power cir-
cuit of each IPM and Figure 6.1
shows the power circuit configura-
tions.
6.1.1 Multilayer Epoxy Construc-
tion
Low power IPM (10-50A, 600V and
10-15A, 1200V) use a multilayer
epoxy based isolation system. In
this system, alternate layers of cop-
per and epoxy are used to create a
shielded printed circuit directly on
the aluminum base plate. Power
chips and gate control circuit com-
ponents are soldered directly to the
substrate eliminating the need for a
separate printed circuit board and
ceramic isolation materials. Mod-
ules constructed using this tech-
nique are easily identified by their
extremely low profile packages.
This package design is ideally
suited for consumer and industrial
applications where low cost and
compact size are important.
Figure 6.2 shows a cross section
of this type of IPM package. Figure
6.3 is a PM20CSJ060 20A, 600V
IPM.
P
U
V
W
C2E1
C1
E2
E
C
N
TYPE C
TYPE D
TYPE H
P
N
U
TYPE R
V
W
B
Figure 6.2
Multi-Layer Epoxy
Construction
Figure 6.1
Power Circuit
Configuration
Figure 6.3
PM20CSJ060
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
Case
Epoxy Resin
Input Signal Terminal
SMT Resistor
Gate Control IC
SMT Capacitor
IGBT Chip
Free-wheel Diode Chip
Bond Wire
Copper Block
Baseplate with Epoxy
Based Isolation
11
10
9
8
6
7
1
2
3
4
5
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
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PDF描述 |
|---|---|
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| PM800HSA120 | FLAT-BASE TYPE INSULATED PACKAGE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PM75RVA060 | 功能描述:MOD IPM HF 600V 75A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PM75RVA060_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75RVA060_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75-XXXK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT POWER INDUCTORS |
| PM761 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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