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参数资料
| 型号： | PM75RSK060 |
| 厂商： | POWEREX INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (75 Amperes/600 Volts) |
| 中文描述： | AC MOTOR CONTROLLER, 150 A, DMA25 |
| 封装： | POWER MODULE-25 |
| 文件页数： | 9/31页 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
6.4. IPM Self Protection
6.4.1 Self Protection Features
IPM (Intelligent Power Modules)
have sophisticated built-in protec-
tion circuits that prevent the power
devices from being damaged
should the system malfunction or
be over stressed. Our design and
applications engineers have devel-
oped fault detection and shut down
schemes that allow maximum utili-
zation of power device capability
without compromising reliability.
Control supply under-voltage, over-
temperature, over-current, and
short-circuit protection are all pro-
vided by the IPM's internal gate
control circuits. A fault output signal
is provided to alert the system con-
troller if any of the protection cir-
cuits are activated. Figure 6.14 is a
block diagram showing the IPMs
internally integrated functions. This
diagram also shows the isolated in-
terface circuits and control power
supply that must be provided by
the user. The internal gate control
circuit requires only a simple +15V
DC supply. Specially designed gate
drive circuits eliminate the need for
a negative supply to off bias the
IGBT. The IPM control input is de-
signed to interface with
optocoupled transistors with a mini-
mum of external components. The
operation and timing of each pro-
tection feature is described in Sec-
tions 6.4.2 through 6.4.5.
6.4.2 Control Supply
Under-Voltage Lock-Out
The Intelligent Power Module's in-
ternal control circuits operate from
an isolated 15V DC supply. If, for
any reason, the voltage of this sup-
ply drops below the specified un-
der-voltage trip level (UV
t
), the
power devices will be turned off
and a fault signal will be generated.
Small glitches less than the speci-
fied t
dUV
in length will not affect the
operation of the control circuitry
and will be ignored by the under-
voltage protection circuit. In order
for normal operation to resume, the
supply voltage must exceed the un-
der-voltage reset level (UV
r
). Op-
eration of the under-voltage protec-
tion circuit will also occur during
power up and power down of the
control supply. This operation is
normal and the system controller's
program should take the fault out-
put delay (t
fo
) into account. Figure
6.15 is a timing diagram showing
the operation of the under-voltage
lock-out protection circuit. In this
diagram an active low input signal
is applied to the input pin of the
IPM by the system controller. The
effects of control supply power up,
power down and failure on the
power device gate drive and fault
output are shown.
Caution:
1.
Application of the main bus
voltage at a rate greater than
20V/
μ
s before the control
power supply is on and stabi-
lized may cause destruction of
the power devices.
2.
Voltage ripple on the control
power supply with dv/dt in ex-
cess of 5V/
μ
s may cause a
false trip of the UV lock-out.
6.4.3 Over-Temperature
Protection
The Intelligent Power Module has a
temperature sensor mounted on
the isolating base plate near the
IGBT chips. If the temperature of
the base plate exceeds the over-
temperature trip level (OT) the
IPMs internal control circuit will
protect the power devices by dis-
abling the gate drive and ignoring
the control input signal until the
over temperature condition has
subsided. In six and seven pack
modules all three low side devices
will be turned off and a low side
fault signal will be generated. High
side switches are unaffected and
can still be turned on and off by the
system controller. Similarly, in dual
type modules only the low side de-
vice is disabled. The fault output
will remain as long as the over-
temperature condition exists. When
the temperature falls below the
over-temperature reset level (OT
r
),
and the control input is high (off-
state) the power device will be en-
abled and normal operation will re-
sume at the next low (on) input sig-
nal. Figure 6.16 is a timing diagram
showing the operation of the over-
GATE
CONTROL
CIRCUIT
GATE DRIVE
OVER TEMP
UV LOCK-OUT
OVER CURRENT
SHORT CIRCUIT
ISOLATED
POWER
SUPPLY
ISOLATING
INTERFACE
CIRCUIT
ISOLATING
INTERFACE
CIRCUIT
CURRENT
SENSE
IGBT
TEMPERATURE
SENSOR
SENSE
CURRENT
INTELLIGENT POWER MODULE
INPUT
SIGNAL
FAULT
OUTPUT
COLLECTOR
EMITTER
Figure 6.14 IPM Functional Diagram
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
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