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参数资料
| 型号： | PMBFJ111 |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 1/7页 |
| 文件大小： | 525K |
| 代理商： | PMBFJ111 |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相关PDF资料 |
PDF描述 |
|---|---|
| PMBFJ112 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| PMBFJ113 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| PMBFJ174 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| PMBFJ175 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| PMBFJ176 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PMBFJ111,215 | 功能描述:JFET JFET N-CH 40V 35mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| PMBFJ111215 | 制造商:NXP Semiconductors 功能描述:JFET RF N CH 300MW SOT-23- |
| PMBFJ111T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 20MA I(DSS) | TO-236 |
| PMBFJ112 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR JFET N RF SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, JFET, N, RF, SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, JFET, N, RF, SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss Min:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:3V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No.;RoHS Compliant: Yes |
| PMBFJ112 T/R | 功能描述:射频JFET晶体管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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