参数资料
型号: PMEG2010EV,115
厂商: NXP Semiconductors
文件页数: 7/7页
文件大小: 100K
描述: DIODE SCHOTTKY 20V 1A SOT666
标准包装: 4,000
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 1A(DC)
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 50µA @ 15V
电容@ Vr, F: 25pF @ 5V,1MHz
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-666
包装: 带卷 (TR)
NXP Semiconductors
Contact information
For additional information please visit:
http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
? NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/02/pp7 Date of release: 2003
Aug
20 Document order number: 9397
750
11684
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