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参数资料
| 型号： | PNA1401LF |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光敏三极管 |
| 英文描述： | Silicon NPN Phototransistors |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件页数： | 2/3页 |
| 文件大小： | 50K |
| 代理商： | PNA1401LF |
2
PNA1401LF, PNZ102F
Phototransistors
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
P
C
— Ta
200
160
120
80
40
Ambient temperature Ta (C )
C
C
0
20
40
60
80
100
0
– 20
I
CE(L)
— V
CE
2.0
1.6
1.2
0.4
0.8
0
Collector to emitter voltage V
CE
(V)
C
C
0
8
16
24
32
I
CE(L)
— L
10
1
10
–1
10
–2
Illuminance L (lx)
C
C
10
10
2
10
3
10
–3
1
V
= 10V
Ta = 25C
T = 2856K
L = 50 lx
100 lx
200 lx
300 lx
400 lx
500 lx
600 lx
700 lx
800 lx
900 lx
1000 lx
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
Conditions
min
typ
5
0.3
800
40
3
max
300
Unit
nA
mA
nm
deg.
μ
s
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
Response time
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
PNA1401LF I
CE(L)
= 0.1mA
PNZ102F I
CE(L)
= 0.1mA
0.1
Collector saturation voltage
V
CE(sat)
L = 500 lx
*1
0.2
0.4
V
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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