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参数资料
| 型号： | PNA2602M |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光敏三极管 |
| 英文描述： | Darlington Phototransistor |
| 中文描述： | PHOTO DARLINGTON DETECTOR |
| 文件页数： | 1/2页 |
| 文件大小： | 50K |
| 代理商： | PNA2602M |
1
PNA2602M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Long lead and visible light cutoff design with PN205
Darlington Phototransistors
50
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
4.5
±
0.3
4.2
±
0.3
1.9
2.3
Unit : mm
1: Emitter
2: Collector
2
1
2
±
0
2
2
4
±
0
3
±
0
2-1.12
2-0.45
±
0.15
2-0.4
±
0.15
1.2
2-0.6
±
0.15
2-0.45
±
0.15
N
3.5
±
0.2
R1.75
2.54
1
2
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r
, t
f*2
V
CE(sat)
*1
Conditions
min
typ
max
0.5
3.0
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, H = 3.75
μ
W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100
I
C
= 100
μ
A, H = 3.75
μ
W/cm
2
0.1
850
35
150
1.5
*1
Measurements were made using infrared light (
λ
= 940 nm) as a light source.
*2
Switching time measurement circuit
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