华晶
CS6N70A3D-G
TO-251
CC/恒流
绝缘栅型场效应管
N沟道
增强型
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SilICon N-Channel Power MOSFET
CS6N70A3D-G
○R Huajing Discrete Devices
General Description:
CS6N70A3D-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for systemminiaturization and higher efficiency.
The package form is TO-251, which accords with the
RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:15.5nC)
l Low Reverse transfer capacitances(Typical:6pF)
l 100%Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger
总 机:O512-5O71O709
传 真:O512-5O1112O9
工厂专线:1595O933O5O
贸易专线:13914994568
Q Q:41086900
E-Mail:master@ksmcu.com
电话:15950933050/13914994568
联系人:韦文林 (先生)
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