UTC
UT20N03L
TO-252
DC/直流
绝缘栅型场效应管
N沟道
增强型
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UT20N03 Power MOSFET
Copyright ? 2008 UnisonIC Technologies Co., Ltd QW-R502-139.B
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 20mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 20
Pulsed Drain Current (Note 1) IDM 120
A
Single Pulsed (Note 2) EAS 15
Avalanche Energy
Repetitive (Note 1) EAR 6
mJ
Peak Diode Recovery (Note 3) dv/dt 6 KV/μs
Power Dissipation PD 60 W
Junction Temperature TJ +175 ℃
Storage Temperature TSTG -55 ~ +175 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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