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参数资料
| 型号： | PS21997-4 |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, DMA25 |
| 封装： | DIPPM-25 |
| 文件页数： | 3/11页 |
| 文件大小： | 181K |
| 代理商： | PS21997-4 |
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Sep. 2008
11
Fig. 12 AN EXAMPLE OF TYPICAL DIPIPM APPLICATION CIRCUIT
15V line
WOUT
VOUT
C3
C2
C1
UOUT
WP
VWB
VP
VVB
5V line
UP
COM
UOUT
VOUT
WOUT
GND
F
o
WN
VN
VCC
C
B
A
R1
N1
C4
CIN
N
W
V
U
P
VWS
VVS
VUS
VUB
VCC
Fo
WN
VN
UN
UN
WP
VP
UP
VNC
VN1
VP1
VUFB
VVFB
VWFB
C3
MCU
HVIC
LVIC
Shunt
resistor
Long wiring here might cause SC
level fluctuation and malfunction.
Long GND wiring here might
generate noise to input and
cause IGBT malfunction.
Long wiring here might
cause short-circuit.
Long wiring here might
cause short-circuit.
M
Bootstrap negative
electrodes should be
connected to U, V, W
terminals directly and
separated from the
main output wires.
Note 1 : Input drive is High-active type. There is a 3.3k
(Min.) pull-down resistor in the input circuit of IC. To prevent malfunction, the wiring of
each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-
off threshold voltage.
2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3: Fo output is open drain type. It should be pulled up to the MCU or control power supply (e.g. 5V, 15V) by a resistor that makes IFo
up to 1mA.
4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2
s. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4
6: All capacitors should be mounted as close to the terminals of DIPIPM as possible. (C1: good temperature, frequency characteristic
electrolytic type, and C2, C3 (0.22~2
F) : good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22
F snubber between the P-N1 terminals is recommended.
8: Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND and leave the other open.
9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND fluctuation. It is
recommended to connect control GND and power GND at only a point N1.
11 : High voltage (VRRM =600V or more) and fast recovery type (trr=100ns or less) diodes should be used in the bootstrap circuit.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS21997-4_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module |
| PS21997-4A | 制造商:Powerex Power Semiconductors 功能描述:MOD DIPIPM 30A 600V SUPER MINI 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 30A, 600V, DIP; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):30A; Isolation Voltage:1.5kV; IPM Mounting Type:PCB; IPM Case Style:DIP; IPM Series:Intellimod 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
| PS21997-4C | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
| PS21997-4W | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
| PS219B2-AS | 制造商:Powerex Power Semiconductors 功能描述:MOD DIPIPM 5A 600V SUPER MINI 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, 600V, 5A, LONG PIN, DIP, IPM Power Device:IGBT, Voltage Rating (Vces / Vdss):600V, Current Rating (Ic / Id):5A, Isolation Voltage:1500V, IPM Series:- |
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