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参数资料
| 型号： | PS21997-4 |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, DMA25 |
| 封装： | DIPPM-25 |
| 文件页数： | 7/11页 |
| 文件大小： | 181K |
| 代理商： | PS21997-4 |
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Sep. 2008
5
2.50
2.60
2.20
1.90
—
0.60
2.65
1.00
1
10
2.1
3.0
mA
V
Tj = 25
°C
Tj = 125
°C
IC = 30A, Tj = 25
°C
IC = 30A, Tj = 125
°C
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Symbol
Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Rth(j-c)Q
Rth(j-c)F
Min.
THERMAL RESISTANCE
Typ.
Max.
—
Unit
Tj = 25
°C, –IC = 30A, VIN = 0V
Condition
Symbol
Parameter
Limits
Min.
Typ.
Max.
—
0.70
—
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWDi forward voltage
Junction to case thermal
resistance
(Note 3)
VD = VDB = 15V
VIN = 5V
Switching times
VCC = 300V, VD = VDB = 15V
IC = 30A, Tj = 125
°C, VIN = 0 5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
VCE = VCES
1.90
2.00
1.70
1.30
0.30
0.40
1.70
0.40
—
V
s
°C/W
Note 3 : Grease with good thermal conductivity and long-term quality should be applied evenly with +100
m~+200m on the contacting
surface of DIPIPM and heat sink.
The contacting thermal resistance between case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of
the applied grease.
For reference, Rth(c-f) (per 1/6 module) is about 0.3
°C/W when the grease thickness is 20m and the thermal conductivity is 1.0W/mK.
DIPIPM
IGBT chip position
Power terminals
FWDi chip position
Control terminals
TC point
Heat sink side
11.6mm
3mm
400
–20~+100
–40~+125
1500
VD = 13.5~16.5V, Inverter part
Tj = 125
°C, non-repetitive, less than 2s
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat sink plate
VCC(PROT)
TC
Tstg
Viso
Symbol
Ratings
Unit
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
V
°C
Vrms
TOTAL SYSTEM
Parameter
Condition
Note 2: TC measurement point
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS21997-4_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module |
| PS21997-4A | 制造商:Powerex Power Semiconductors 功能描述:MOD DIPIPM 30A 600V SUPER MINI 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 30A, 600V, DIP; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):30A; Isolation Voltage:1.5kV; IPM Mounting Type:PCB; IPM Case Style:DIP; IPM Series:Intellimod 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
| PS21997-4C | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
| PS21997-4W | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
| PS219B2-AS | 制造商:Powerex Power Semiconductors 功能描述:MOD DIPIPM 5A 600V SUPER MINI 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, 600V, 5A, LONG PIN, DIP, IPM Power Device:IGBT, Voltage Rating (Vces / Vdss):600V, Current Rating (Ic / Id):5A, Isolation Voltage:1500V, IPM Series:- |
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