参数资料
| 型号： | PS8551L4-AX |
| 厂商： | CEL |
| 文件页数： | 14/18页 |
| 文件大小： | 0K |
| 描述： | ISOLATOR AMP ANALOG 5KRMS 8MD |
| 标准包装： | 50 |
| 放大器类型： | 隔离 |
| 电路数： | 1 |
| 输出类型： | 差分 |
| -3db带宽： | 100kHz |
| 电流 - 输入偏压： | 500nA |
| 电压 - 输入偏移： | 300µV |
| 电流 - 电源： | 16mA |
| 电流 - 输出 / 通道： | 18.6mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，鸥翼型 |
| 供应商设备封装： | 8-SMD 鸥翼型 |
| 包装： | 管件 |
PS8551L4
Chapter Title
7
1
f
o
5
e
g
a
P
0
.
2
.
v
e
R
0
2
0
J
E
9
3
0
S
D
8
0
R
Sep 06, 2011
ELECTRICAL CHARACTERISTICS (DC Characteristics)
(TYP.: TA = 25°C, VIN+ = VIN = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
e
g
a
tl
o
V
t
e
sf
f
O
t
u
p
n
I
os
TA = 25°C
2
0.3
2
mV
3
Input Offset Voltage Drift
vs. Temperature
dVos/dTA TA = 25 to +85°C
3
10
μ
V/°C
Gain*1
G
200 mV ≤ VIN+ ≤ 200 mV,
TA = 25°C
7.76
8
8.24
V/V
Gain Drift vs. Temperature
dG/dTA
V
/
V
7
8
0
.
0
°
C
VOUT Non-linearity (200 mV)*2
NL200
200 mV ≤ VIN+ ≤ 200 mV
0.021
0.35
%
VOUT Non-linearity (200 mV) Drift
vs. Temperature
dNL200/dTA
/
%
2
0
.
0
°
C
VOUT Non-linearity (100 mV)*2
NL100
100 mV ≤ VIN+ ≤ 100 mV
0.014
0.2
%
Maximum Input Voltage before VOUT
Clipping
VIN+
V
m
8
0
3
.
X
A
M
I
t
n
e
rr
u
C
yl
p
u
S
t
u
p
n
I
DD
1
VIN+
A
m
0
2
6
1
V
m
0
4
=
Output Supply Current
IDD2
VIN+ =
A
m
6
1
0
1
V
m
0
4
I
t
n
e
rr
u
C
s
ai
B
t
u
p
n
I
IN+
VIN+ V
0
=
0.5
5
μ
A
Input Bias Current Drift
vs. Temperature
dIIN+/dTA
/
A
n
5
4
.
0
°
C
Low Level Saturated Output Voltage
VOL
VIN+ =
V
9
2
.
1
V
m
0
4
High Level Saturated Output Voltage
VOH
VIN+
V
8
.
3
V
m
0
4
=
Output Voltage (VIN+ = VIN = 0 V)
VOCM
VIN+ = VIN
V
8
.
2
5
.
2
.
2
V
0
=
Output Short-circuit Current
IOSC
A
m
6
.
8
1
Equivalent Input Resistance
RIN
k
0
2
3
Ω
VOUT Output Resistance
ROUT
5
1
Ω
Input DC Common-Mode Rejection
Ratio*3
CMRRIN
B
d
6
7
*1 The differential output voltage (VOUT+ VOUT) with respect to the differential input voltage (VIN+ VIN), where VIN+ =
200 mV to 200 mV and VIN = 0 V) is measured under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon
the resulting chart, the gain is defined as the slope of the optimum line obtained by using the method of least
squares.
*2 The differential output voltage (VOUT+ VOUT) with respect to the differential input voltage (VIN+ VIN) is measured
under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon the resulting chart, the optimum line is obtained by
using the method of least squares. Non-linearity is defined as the ratio (%) of the optimum line obtained by dividing
[Half of the peak to peak value of the (residual) deviation] by [full-scale differential output voltage].
For example, if the differential output voltage is 3.2 V, and the peak to peak value of the (residual) deviation is 22.4
mV, while the input VIN+ is ±200 mV, the output non-linearity is obtained as follows:
NL200 = 22.4/(2 × 3 200) = 0.35%
*3 CMRRIN is defined as the ratio of the differential signal gain (when the differential signal is applied between the
input pins) to the common-mode signal gain (when both input pins are connected and the signal is applied). This
value is indicated in dB.
<R>
A Business Partner of Renesas Electronics Corporation.
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| PS8551L4-E3-AX | 功能描述:ISOLATOR AMP ANALOG 5KRMS 8SMD RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:150 系列:- 放大器类型:音频 电路数:2 输出类型:- 转换速率:5 V/µs 增益带宽积:12MHz -3db带宽:- 电流 - 输入偏压:100nA 电压 - 输入偏移:500µV 电流 - 电源:6mA 电流 - 输出 / 通道:50mA 电压 - 电源，单路/双路(±):4 V ~ 32 V，±2 V ~ 16 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:8-TSSOP 包装:管件 |
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| PS8551L4-V-AX | 功能描述:ISOLATOR AMP ANALOG 5KRMS 8SMD RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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