参数资料
| 型号： | PS9305L-E3-AX |
| 厂商： | CEL |
| 文件页数： | 16/20页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER IGBT GATE DVR 8SOIC |
| 标准包装： | 2,000 |
| 系列： | NEPOC |
| 电压 - 隔离： | 5000Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 2A |
| 传输延迟高 - 低 @ 如果： | 180ns @ 10mA |
| 电流 - DC 正向(If)： | 16mA |
| 输入类型： | DC |
| 输出类型： | 栅极驱动器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.268"，6.81mm 宽） |
| 供应商设备封装： | 8-SDIP 鸥翼型 |
| 包装： | 带卷 (TR) |
| 其它名称： | PS9305L-E3-AX-ND PS9305L-E3-AXTR |
PS9305L
Chapter Title
(4) Cautions
? Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1 μ F is used between V CC and GND near device. Also, ensure that the
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) In older to avoid malfunctions and characteristics degradation, IGBT collector or emitter traces should not be
closed to the LED input.
(3) Pin 4 (which is an NC *1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
*1 NC: Non-Connection (No Connection)
3. Make sure the rise/fall time of the forward current is 0.5 μ s or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/ μ s or less.
5. Avoid storage at a high temperature and high humidity.
R08DS0013EJ0100 Rev.1.00
May 16, 2011
Page 16 of 18
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS9305L-V | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN SDIP PHOTOCOUPLER |
| PS9305L-V-E3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN SDIP PHOTOCOUPLER |
| PS9306L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER |
| PS9306L2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER |
| PS9306L2-AX | 功能描述:高速光耦合器 High CMR IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
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