- 您现在的位置：买卖IC网 > PDF目录370029 > PZ1721B25U (NXP SEMICONDUCTORS) NPN microwave power transistors PDF资料下载
参数资料
| 型号： | PZ1721B25U |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 2/16页 |
| 文件大小： | 131K |
| 代理商： | PZ1721B25U |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
RF performance up to T
mb
= 25
°
C in a common base class-B wideband amplifier.
TYPE NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
≥
27
≥
25
≥
20
G
p
(dB)
≥
7.3
≥
7
≥
6
η
C
(%)
≥
38
≥
35
≥
35
Z
i
; Z
L
(
)
PZ1418B30U
PZ1721B25U
PZ2024B20U
1.4 to 1.8
1.7 to 2.1
2 to 2.4
28
28
28
see Figs 6 and 7
see Figs 11 and 12
see Figs 16 and 17
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相关PDF资料 |
PDF描述 |
|---|---|
| PZ2327B15U | TRANSISTOR | BJT | NPN | 2.1A I(C) | FO-57D |
| PZFJ108 | TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 80MA I(DSS) | SOT-223 |
| PZFJ109 | TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 40MA I(DSS) | SOT-223 |
| PZFJ110 | RF inductor, ceramic core, 5% tol, SMT, RoHS |
| PZT2222A | NPN General Purpose Amplifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PZ-18-3 B0 | 制造商:WM BERG 功能描述: |
| PZ1A1C0BA20E1 | 制造商:Panduit Corp 功能描述:19", 2 RU HORIZONTAL, 20 A, 12 制造商:Panduit Corp 功能描述:19", 2 RU HORIZONTAL, 20 A, 120V, 20 OUT - Bulk 制造商:Panduit Corp 功能描述:19, 2 RU HORIZONTAL, 20 A, 120V, 20 OUT |
| PZ1A1D0BA20E1 | 制造商:Panduit Corp 功能描述:2 RU HORIZONTAL POWER STRIP 20 制造商:Panduit Corp 功能描述:2 RU HORIZONTAL POWER STRIP 20 A, 120V, - Bulk |
| PZ1A1M2BM20E1 | 制造商:Panduit Corp 功能描述:19", 2 RU HORIZONTAL UNIT, NET 制造商:Panduit Corp 功能描述:19", 2 RU HORIZONTAL UNIT, NETWORKED WI - Bulk 制造商:Panduit Corp 功能描述:19, 2 RU HORIZONTAL UNIT, NETWORKED WI |
| PZ1B1E0BA20H1 | 制造商:Panduit Corp 功能描述:2 RU HORIZONTAL POWER STRIP 20 制造商:Panduit Corp 功能描述:2 RU HORIZONTAL POWER STRIP 20 A, 208V, - Bulk |
发布紧急采购，3分钟左右您将得到回复。