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参数资料
| 型号： | PZ1721B25U |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 7/16页 |
| 文件大小： | 131K |
| 代理商： | PZ1721B25U |
1997 Feb 19
7
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
PZ1721B25U
Microwave performance up to T
mb
= 25
°
C in a common base class B wideband amplifier.
TYPE
NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
≥
25
typ. 30
G
p
(dB)
≥
7
typ. 7.8
η
C
(%)
≥
35
typ. 44
Z
i
; Z
L
(
)
PZ1721B25U
1.7 to 2.1
28
see Figs 11 and 12
Fig.8 Wideband test circuit board for 1.7 to 2.1 GHz operation (PZ1721B25U).
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
handbook, full pagewidth
MGK063
output
50
input
50
3
2
5
4
3
5
2
2
3
10
10
5
5
4
4
0.65
0.65
100 pF
(ATC)
Fig.9
Load power as a function of input power;
typical values for PZ1721B25U.
Class-B operation; V
CC
= 28 V; T
mb
= 25
°
C.
(1) 1.7 GHz.
(2) 1.9 GHz.
(3) 2.1 GHz.
handbook, halfpage
PL
(W)
2
4
6
0
0
Pi (W)
20
MGL008
(3)
(2)
(1)
Fig.10 Load power, efficiency and VSWR as
functions of frequency; typical values
for PZ1721B25U.
Class-B operation; V
CC
= 28 V; T
mb
= 25
°
C; P
i
= 5 W.
1.7
35
25
40
PL
(W)
PL
50
2
VSWR
f (GHz)
1
1.8
2.2
1.9
2.0
2.1
η
C
(%)
η
C
MGL014
VSWR
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