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参数资料
| 型号： | PZTA27 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:3; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket |
| 中文描述： | 800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | PZTA27 |
2002 Fairchild Semiconductor Corporation
Rev. A1, June 2002
M
Absolute Maximum Ratings*
T
A
=25
°
C
unless otherwise noted
Symbol
V
CES
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Operating and Storage Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CES
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
On Characteristics
h
FE
DC Current Gain
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm
:
mounting pad for the collector lead min. 6cm.
Parameter
Value
60
60
10
800
-55 ~ +150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Typ.
Max.
Units
I
C
= 100
μ
A, V
BE
= 0
I
C
= 10
μ
A, I
C
= 0
I
C
= 100
μ
A, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, V
BE
= 0
V
EB
= 10V, I
C
= 0
60
60
10
V
V
V
nA
nA
nA
100
500
100
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
CE
= 5.0V
10000
10000
V
CE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
1.5
2.0
V
V
Current Gain Bandwidth Product
I
C
= 10mA, V
CE
= 5.0V,
f = 100MHz
125
MHz
Symbol
Parameter
Max.
Units
MPSA27
625
5.0
83.3
200
*PZTA27
1000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
125
MPSA27/PZTA27
NPN General Purpose Amplifier
This device is designed for applications requiring
extremely high current gain at collector currents to
500mA.
Sourced from process 03.
See MPSA28 for characteristics.
1. Base 2. Collector 3. Emitter
1
2
4
TO-92
1
1. Emitter 2. Base 3. Collector
3
SOT-223
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