参数资料
型号: Q62702-F610
厂商: SIEMENS AG
英文描述: PNP SILICON PLANAR TRANSISTOR
中文描述: 进步党硅平面晶体管
文件页数: 3/11页
文件大小: 101K
代理商: Q62702-F610
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
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相关代理商/技术参数
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Q62702-F612 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR
Q62702-F621 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)
Q62702-F622 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
Q62702-F626 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR
Q62702-F640 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages)