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参数资料
| 型号： | Q62702-F610 |
| 厂商： | SIEMENS AG |
| 英文描述： | PNP SILICON PLANAR TRANSISTOR |
| 中文描述： | 进步党硅平面晶体管 |
| 文件页数： | 4/11页 |
| 文件大小： | 101K |
| 代理商： | Q62702-F610 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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相关代理商/技术参数 |
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|---|---|
| Q62702-F612 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR |
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| Q62702-F622 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F626 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR |
| Q62702-F640 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
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