参数资料
型号: QEB363GR
厂商: Fairchild Optoelectronics Group
文件页数: 1/5页
文件大小: 0K
描述: LED IR EMITTING 940NM 2MM GW T/R
标准包装: 1
电流 - DC 正向(If): 100mA
辐射强度(le)最小值@正向电流: 8mW/sr @ 100ma
波长: 940nm
正向电压: 1.6V
视角: 24°
方向: 顶视图
安装类型: 表面贴装
封装/外壳: 2-SMD,鸥翼型
包装: 标准包装
其它名称: QEB363GRDKR
September 2006
QEB363
Subminiature Plastic Infrared Emitting Diode
Features
■ T-3/4 (2mm) Surface Mount Package
■ Tape & Reel Option (See Tape & Reel Specifications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
■ Narrow Emission Angle, 24°
■ Wavelength = 940nm, GaAs
■ Clear Water Lens
■ Matched Photosensor: QSB363
■ High Radiant Intensity
Package Dimensions
tm
0.276 (7.0)
ANODE
MIN
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
0.016 (0.4)
.118 (3.0)
0.074 (1.9)
0.019 (0.5)
0.012 (0.3)
.059 (1.5)
.051 (1.3)
Schematic
.102 (2.6)
0.008 (0.21)
0.055 (1.4)
ANODE
0.004 (0.11)
0.106 (2.7)
0.024 (0.6)
0.091 (2.3)
Notes:
1. Dimensions are in inches (mm).
2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified.
?2002 Fairchild Semiconductor Corporation
QEB363 Rev. 1.0.0
www.fairchildsemi.com
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