参数资料
型号: QEC113
厂商: Fairchild Optoelectronics Group
文件页数: 3/5页
文件大小: 0K
描述: LED IR EMITTING GAAS 940NM 3MM
产品目录绘图: QEC113, 122 Pinout
标准包装: 250
系列: QEC11x
电流 - DC 正向(If): 50mA
辐射强度(le)最小值@正向电流: 14mW/sr @ 100mA
波长: 940nm
正向电压: 1.5V
视角: 24°
方向: 顶视图
安装类型: 通孔
封装/外壳: T-1
产品目录页面: 2865 (CN2011-ZH PDF)
其它名称: QEC113QT
QEC113QT-ND
Typical Performance Curves
1.0
Fig. 1 Normalized Intensity vs. Wavelength
975
Fig. 2 Peak Wavelength vs. Ambient Temperature
0.9
970
I F = 20mA DC
0.8
965
0.7
0.6
0.5
0.4
960
955
950
0.3
945
0.2
0.1
940
0.0
700
750
800
850
900
950
1,000
1,050
935
0
10
20
30
40
50
60
70
80
90
100
10
λ (nm)
Fig. 3 Normalized Radiant Intensity vs. Forward Current
T A – AMBIENT TEMPERTURE ( ° C)
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
1.4
Normalized to:
I F = 100mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.2
1.0
Normalized to:
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
0.8
1
0.6
0.4
0.2
0.1
10
100
1000
0.0
0
10
20
30
40
50
60
70
80
90
100
3.5
I F – FORWARD CURRENT (mA)
Fig. 5 Forward Voltage vs. Forward Current
1.55
T A – AMBIENT TEMPERTURE ( ° C)
Fig. 6 Forward Voltage vs. Ambient Temperature
3.0
I F Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.50
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
1.45
2.5
1.40
2.0
1.35
1.5
1.30
1.0
10
100
1000
1.25
0
10
20
30
40
50
60
70
80
90
100
I F – FORWARD CURRENT (mA)
?2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
3
T A – AMBIENT TEMPERTURE ( ° C)
www.fairchildsemi.com
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