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参数资料
| 型号： | QED234A4R0 |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | LED IR EMITTING ALGAAS 940NM 5MM |
| 标准包装： | 1,200 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 27mW/sr @ 100mA |
| 波长： | 940nm |
| 正向电压： | 1.6V |
| 视角： | 40° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 |
| 包装： | 带卷 (TR) |
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED233
ABSOLUTE MAXIMUM RATINGS
(T A = 25 ° C unless otherwise specified)
QED234
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Soldering Temperature (Flow) (2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation (1)
Peak Forward Current
Symbol
T OPR
T STG
T SOL-I
T SOL-F
I F
V R
P D
I FP
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
5
200
1.5
Unit
° C
° C
° C
° C
mA
V
mW
A
1. Derate power dissipation linearly 2.67 mW/ ° C above 25 ° C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16 ” (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 μs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS
(T A =25 ° C)
PARAMETER
Peak Emission Wavelength
Spectral Bandwidth
TEST CONDITIONS
I F = 20 mA
I F = 20 mA
DEVICE
ALL
ALL
SYMBOL
PE
—
MIN
—
50
TYP
940
—
MAX
—
nm
UNITS
nm
Temp. Coefficient of
PE
I F = 100 mA
ALL
TC
—
0.2
—
nm/K
Emission Angle
I F = 100 mA
ALL
2
1/2
—
40
—
Deg.
Forward Voltage
Temp. Coefficient of V F
Reverse Current
Radiant Intensity
I F = 100 mA, tp = 20 ms
I F = 100 mA
V R = 5 V
I F = 100 mA, tp = 20 ms
ALL
ALL
ALL
QED233
V F
TC V
I R
I E
—
—
—
10
—
-1.5
—
—
1.6
—
10
50
V
mV/K
μA
mW/sr
QED234
27
—
—
Temp. Coefficient of I E
Rise Time
Fall Time
I F = 20 mA
I F = 100 mA
ALL
ALL
ALL
TC I
t r
t f
—
—
—
-0.6
1000
1000
—
—
—
%/K
ns
www.fairchildsemi.com
2 OF 4
10/31/01 DS300338
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