参数资料
型号: QEE113
厂商: Fairchild Optoelectronics Group
文件页数: 1/5页
文件大小: 0K
描述: LED IR EMITTING 940NM SIDELOOKER
产品目录绘图: QEE113, 123 Pinout
标准包装: 500
电流 - DC 正向(If): 50mA
辐射强度(le)最小值@正向电流: 3mW/sr @ 100mA
波长: 940nm
正向电压: 1.5V
视角: 50°
方向: 侧视图
安装类型: 通孔
封装/外壳: 径向
产品目录页面: 2865 (CN2011-ZH PDF)
其它名称: QEE113QT
QEE113QT-ND
August 2008
QEE113
Plastic Infrared Light Emitting Diode
Features PACKAGE DIMENSIONS
■ λ = 940nm
■ Package Type = Sidelooker
■ Chip Material = GaAs
■ Matched Photosensor: QSE113
■ Medium Wide Emission Angle, 50°
■ Package Material: Clear Epoxy
■ High Output Power
■ Gray stripe on the top side
Package Dimensions
0.175 (4.44)
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
0.087 (2.22)
0.050 (1.27)
?0.065 (1.65)
0.200 (5.08)
?0.095 (2.41)
0.500 (12.70)
MIN
CATHODE
ANODE
0.020 (0.51) SQ.
(2X)
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
?2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
Schematic
ANODE
CATHODE
www.fairchildsemi.com
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相关代理商/技术参数
参数描述
QEE113 制造商:Fairchild Semiconductor Corporation 功能描述:IR Emitting Diode
QEE113 制造商:UNBRANDED 功能描述:IR EMITTER 940NM
QEE113_Q 功能描述:红外发射源 0.015mW 1.5V IR LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEE113E3R0 功能描述:红外发射源 infrared Lt Emitting Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEE122 功能描述:红外发射源 INFRARED DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk