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参数资料
| 型号： | QM15KD-HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 5/6页 |
| 文件大小： | 89K |
| 代理商： | QM15KD-HB |
Feb.1999
I
r
r
μ
c
S
–
C
t
r
μ
s
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0
10
10
7
5
3
2
3.2
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
Z
t
°
C
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
–1
10
–2
10
–3
10
1
0
10
2
10
1
10
7
5
4
3
2
10
7
5
4
3
2
0
40
80
120
160
200
60
100
140
180
20
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
10
10
0
10
10
T
j
=25°C
T
j
=125°C
I
B2
=–300mA
I
B1
=90mA
V
CC
=300V
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
0
0.4
0.8
1.2
1.6
2.4
2.8
相关PDF资料 |
PDF描述 |
|---|---|
| QM15TB-2HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2H | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM15TB2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2HB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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