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参数资料
| 型号： | QM15TB-2HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 1/5页 |
| 文件大小： | 79K |
| 代理商： | QM15TB-2HB |
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM15TB-2HB
I
C
V
CEX
h
FE
Insulated Type
UL Recognized
Collector current ..........................
15A
Collector-emitter voltage .........
1000V
DC current gain.............................
250
Yellow Card No. E80276 (N)
File No. E80271
107
81
21.5
20
21.5
17.5
4
2
93
7.5 14 7.5 14 7.5 16
1
3
2–
φ
5.5
O
P
O
N
BuP EuP
BvP EvP BwP EwP
U
V
W
BuN EuN BvN EvN BwNEwN
Tab#110, t=0.5 (Fig. 2)
Tab#250, t=0.8 (Fig. 1)
2
7
1
LABEL
8
Fig. 1
3.8
2.8
Fig. 2
6.35
φ
1.2
φ
1.65
3
7
1
5
1
7
P
BuP
EuP
U
BuN
EuN
N
BvP
EvP
V
BvN
EvN
BwP
EwP
W
BwN
EwN
Note: All Transistor Units are 3-Stage Darlingtons.
相关PDF资料 |
PDF描述 |
|---|---|
| QM15TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2H | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
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参数描述 |
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| QM15TD-H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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