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参数资料
| 型号： | QM15TB-2HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 4/5页 |
| 文件大小： | 79K |
| 代理商： | QM15TB-2HB |
Feb.1999
0
10
–1
10
–2
10
–3
10
0
10
1
10
7
2
10
1
10
0
10
–1
10
10
0
1
10
2
10
3
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
5μ
1ms
DC
100μs
200μs
1
10
7
5
4
3
2
10
7
5
4
3
2
3 4 5 7
0
10
2 3
–1
10
2
2
4 5 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=90mA
I
C
=15A
V
CC
=600V
t
f
32
00
1000
800
600
400
200
8
16
24
12
20
28
4
T
j
=125°C
I
B2
=–2.5A
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.6
0.8
1.0
0
5
3
2
0.4
4
4
4
4
2
10
10
7
5
4
3
2
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| QM15TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2H | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
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|---|---|
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| QM15TG-9B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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