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参数资料
| 型号： | QM15TD-H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 3/5页 |
| 文件大小： | 75K |
| 代理商： | QM15TD-H |
Feb.1999
25
20
15
10
5
00
1
2
3
4
5
T
j
=25°C
I
B
=0.4A
I
B
=0.2A
I
B
=0.1A
I
B
=0.06A
I
B
=0.02A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
–1
10
10
7
5
4
3
2
–2
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
I
B
=0.2A
V
BE(sat)
V
CE(sat)
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
0
1
2
3
4
5
7
T
j
=25°C
T
j
=125°C
I
C
=15A
I
C
=10A
I
C
=6A
1
10
7
5
4
3
2
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
–1
10
T
j
=25°C
T
j
=125°C
I
B1
=–I
B2
=0.3A
V
CC
=300V
t
s
t
on
t
f
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM15TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
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|---|---|
| QM15TD-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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| QM15TG-9B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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