参数资料
型号: QM200DY-24B
厂商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率开关使用绝缘型
文件页数: 1/5页
文件大小: 85K
代理商: QM200DY-24B
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM200DY-24B
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, Inverters, DC motor controllers, NC equipment, Welders
112
93±
0.25
25
2
1
25
21.5
C1
E2
C2E1
14
17
8
17
8
17
8
5
6
6
1
6
6
7
0
8
5
3
1
2.8
8
(
2
B
E
B
B
B
B1X
B2X
B2
E2
B1
E1
C2E1
E2
C1
1
4–
φ
6.5
3 – M6
LABEL
Tab#110, t=0.5
1
I
C
V
CEX
h
FE
Insulated Type
UL Recognized
Collector current ........................
200A
Collector-emitter voltage .........
1200V
DC current gain.............................
750
Yellow Card No. E80276 (N)
File No. E80271
相关PDF资料
PDF描述
QM200DY-2HB CAP, 10UF, CER, ?20%, Y5V, 10V, 1206
QM200DY-2H CAP CER 10UF 10V Y5V 1206
QM200DY24 TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY24B TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY2H TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
相关代理商/技术参数
参数描述
QM200DY2H 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200DY-2H 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM200DY2HB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200DY-2HB 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM200DY-H 制造商:n/a 功能描述:Darlington Module