- 您现在的位置：买卖IC网 > PDF目录361299 > QM200DY-24B (Mitsubishi Electric Corporation) HIGH POWER SWITCHING USE INSULATED TYPE PDF资料下载
参数资料
| 型号： | QM200DY-24B |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率开关使用绝缘型 |
| 文件页数： | 3/5页 |
| 文件大小： | 85K |
| 代理商： | QM200DY-24B |
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
–1
10
–1
10
–1
10
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–2
10
–1
10
7
1
10
0
10
–1
10
1
10
7
5
4
3
2
10
7
5
4
3
2
3.0
5.0
4.6
4.2
3.8
3.4
T
j
=25°C
V
CE
=4.0V
500
400
300
200
100
00
1
2
3
4
5
T
j
=25°C
I
B
=0.4A
I
B
=8.0A
I
B
=1.0A
I
B
=2.0A
I
B
=4.0A
7
5
3
2
5
3
2
5
4
3
2
1
0
3
2
I
C
=100A
7
5
T
j
=25°C
T
j
=125°C
I
C
=200A
I
C
=300A
1
2 3 4 5 7
2 3 4 5 7
3
10
t
s
t
on
t
f
I
B1
=0.4A
–I
B2
=4.0A
V
CC
=600V
2
10
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25°C
T
j
=125°C
I
B
=270mA
V
BE(sat)
V
BE(sat)
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
T
j
=25°C
T
j
=125°C
V
CE
=4V
V
CE
=10V
相关PDF资料 |
PDF描述 |
|---|---|
| QM200DY-2HB | CAP, 10UF, CER, ?20%, Y5V, 10V, 1206 |
| QM200DY-2H | CAP CER 10UF 10V Y5V 1206 |
| QM200DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM200DY2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY2HB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-H | 制造商:n/a 功能描述:Darlington Module |
发布紧急采购，3分钟左右您将得到回复。