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参数资料
| 型号： | QM200DY-2HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP, 10UF, CER, ?20%, Y5V, 10V, 1206 |
| 中文描述： | 大功率开关使用绝缘型 |
| 文件页数： | 2/5页 |
| 文件大小： | 86K |
| 代理商： | QM200DY-2HB |
Feb.1999
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
200
200
1560
10
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V, Collector open
I
C
=200A, I
B
=270mA
I
C
=–200A (diode forward voltage)
I
C
=200A, V
CE
=4.0V
V
CC
=600V, I
C
=200A I
B1
=0.4A, –I
B2
=4.0A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
4.0
4.0
1.8
—
2.5
15
3.0
0.08
0.35
0.04
相关PDF资料 |
PDF描述 |
|---|---|
| QM200DY-2H | CAP CER 10UF 10V Y5V 1206 |
| QM200DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM200DY-H | 制造商:n/a 功能描述:Darlington Module |
| QM200DY-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200HA24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200HA-24 | 制造商:n/a 功能描述:Darlington Module |
| QM200HA-2H | 制造商:n/a 功能描述:Darlington Module |
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