参数资料
型号: QM200DY-2HB
厂商: Mitsubishi Electric Corporation
英文描述: CAP, 10UF, CER, ?20%, Y5V, 10V, 1206
中文描述: 大功率开关使用绝缘型
文件页数: 4/5页
文件大小: 86K
代理商: QM200DY-2HB
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
T
j
=25°C
T
j
=125°C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
7
5
3
2
10
10
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
3
10
2
10
1
10
0
10
10
–1
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
2 3 4 5 7
2 3 4 5 7
1
10
t
s
t
f
0
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=0.4A
I
C
=200A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
7
5
3
2
0
T
C
=25°C
NON–REPETITIVE
2
10
3
10
1
10
0
10
3
10
2
10
10
10
1ms
100μs
50μs
200μs
DC
7
5
3
2
7
5
3
2
7
5
3
2
0.10
0.08
0.06
0.04
0.02
0
10
10
–3
–2
10
–1
10
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.4
2.4
2.0
1.6
1.2
0.8
10
400
00
400
800
1200
1600
300
200
100
I
B2
=–4A
T
j
=125°C
I
B2
=–8A
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
相关PDF资料
PDF描述
QM200DY-2H CAP CER 10UF 10V Y5V 1206
QM200DY24 TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY24B TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY2H TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200DY2HB TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
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