参数资料
型号: QRD1113
厂商: Fairchild Optoelectronics Group
文件页数: 2/7页
文件大小: 0K
描述: SENSR OPTO TRANS 1.27MM REFL PCB
标准包装: 100
检测距离: 0.050"(1.27mm)
检测方法: 反射
电压 - 集电极发射极击穿(最大): 30V
电流 - DC 正向(If): 50mA
输出类型: 光电晶体管
响应时间: 10µs,50µs
安装类型: 通孔
封装/外壳: PCB 安装
包装: 散装
工作温度: -40°C ~ 85°C
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise specified.
Symbol
T OPR
T STG
T SOL-I
T SOL-F
Parameter
Operating Temperature
Storage Temperature
Lead Temperature (Solder Iron) (1,2,3)
Lead Temperature (Solder Flow) (1,2)
Min.
-40 to +85
-40 to + 100
240 for 5 s
260 for 10 s
Unit
°C
EMMITER
I F
V R
P D
Continuous Forward Current
Reverse Voltage
Power Dissipation
50
5
100
mA
V
mW
SEMSOR
V CEO
V ECO
P D
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation (4)
30
100
V
V
mW
Notes:
1. RMA flux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Soldering iron tip 1/16 inch (1.6 mm) minimum from housing.
4. Derate power dissipation linearly 1.33 mW/°C.
? 2005 Fairchild Semiconductor Corporation
QRD1113 / QRD1114 Rev. 1.2.0
2
www.fairchildsemi.com
相关PDF资料
PDF描述
QRE1113GR SENSOR OPTO TRANS REFL SMD PHOTO
QRM85BXXG02E LED PMI REAR MOUNT GREEN
QS5K2TR MOSFET 2N-CH 30V 2A TSMT5
QS5U12TR MOSFET N-CH 30V 2A TSMT5
QS5U13TR MOSFET N-CH 30V 2A TSMT5
相关代理商/技术参数
参数描述
QRD1113_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Reflective Object Sensor
QRD1113_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Reflective Object Sensor
QRD1113_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Reflective Object Sensor
QRD1114 功能描述:光学开关(反射型,光电晶体管输出) PHOTO TRANS RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
QRD1114 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOSWITCH ROHS COMPLIANT:NO