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参数资料
| 型号： | QSB363 |
| 厂商： | QT OPTOELECTRONICS |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 100K |
| 代理商： | QSB363 |
1 of 3
100009A
NOTES
1. Derate power dissipation linearly
1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16” (1.6mm)
from housing
Parameter
Symbol
Rating
Units
Operating Temperature
TOPR
-40 to +85
°C
Storage Temperature
TSTG
-40 to +85
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260 for 10 sec
°C
Collector Emitter Voltage
VCE
30
V
Emitter Collector Voltage
VEC
5V
Power Dissipation(1)
PD
100
mW
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Peak Sensitivity Wavelength
l
PS
—
880
—
nm
Reception Angle
U
—
±12
—
Deg.
Dark Current
VCE = 10V, Ee = 0
ID
—
100
nA
Collector-Emitter Breakdown
IC = 1mA
BVCEO
30
—
V
Emitter-Collector Breakdown
IE = 100A
BVECO
4—
—
V
On-State Collector Current
Ee = 0.5mW/cm2
IC(on)
0.7
—
mA
VCE = 5V(6)
Saturation Voltage
Ee = 0.5mW/cm2
VCE (SAT)
—
0.4
V
IC = 0.1mA(6)
Rise Time
VCC = 5V, RL = 100V
tr
—5
—
s
Fall Time
IC = 0.2mA
tf
—5
—
s
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PACKAGE DIMENSIONS
QSB363
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
FEATURES
NPN Silicon Phototransistor
T-3/4 (2mm) Surface Mount Package
Medium Wide Beam Angle, 24°
Black Plastic Package
Matched Emitters: QEB363 or QEB373
Daylight Filter
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| QSB363 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS PHOTO ROHS COMPLIANT:NO |
| QSB363_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
| QSB363_Q | 功能描述:光电晶体管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| QSB363C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
| QSB363C_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
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