参数资料
型号: QSB363
厂商: QT OPTOELECTRONICS
元件分类: 光敏三极管
英文描述: PHOTO TRANSISTOR DETECTOR
文件页数: 2/3页
文件大小: 100K
代理商: QSB363
2 of 3
100009A
TYPICAL PERFORMANCE CURVES
QSB363
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
R
e
la
ti
v
e
S
e
n
s
it
iv
it
y
(%
)
Wavelength
l (nm)
0
20
40
60
80
100
400
500
600
700
800
900
1000 1100
Fig. 5 Spectral Sensitivity
100
90
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
85
100
Ambient Temperature TA (C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
C
o
ll
e
c
to
r
P
o
w
e
r
D
is
s
ip
a
ti
o
n
(m
W
)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
R
e
la
ti
v
e
C
o
ll
e
c
to
r
C
u
rr
e
n
t
(%
)
Ambient Temperature TA (C)
0
20
40
60
80
100
0
10
20
30
40
50
60
70
120
140
160
V
=5V
E =1mW/cm2
e
ce
7
6
5
4
3
2
1
0
1
2
3
4
C
o
ll
e
c
to
r
C
u
rr
e
n
t
I C
(m
A
)
Collector Emitter Voltage VCE (V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
C
o
ll
e
c
to
r
C
u
rr
e
n
t
I C
(m
A
)
Irradiance Ee (mW/cm2)
0.1
0.2
0.5
1
2
5
10
20
0.2
2
5
10
1
0.5
0.1
VCE=5V
TA = 25
Ambient Temperature TA (C)
Fig. 2 Collector Dark Current vs.
Ambient Temperature
1010
106
107
108
109
2
5
2
5
2
5
2
5
C
o
ll
e
c
to
r
D
a
rk
C
u
rr
e
n
t
(A
)
0
25
50
75
100
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相关代理商/技术参数
参数描述
QSB363 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS PHOTO ROHS COMPLIANT:NO
QSB363_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor
QSB363_Q 功能描述:光电晶体管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSB363C 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor
QSB363C_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor