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参数资料
| 型号： | QSB363YR |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IC PHOTOTRANS IR 940NM 1.9MM YOK |
| 标准包装： | 1,000 |
| 电流 - DC 正向(If)： | 100mA |
| 波长： | 940nm |
| 视角： | 24° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | T 3/4 |
| 包装： | 带卷 (TR) |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise specified.
Soldering Temperature (Iron)
Symbol
T OPR
T STG
T SOL-I
T SOL-F
V CEO
V ECO
Parameter
Operating Temperature
Storage Temperature
(1,2)
Soldering Temperature (Flow) (1,2)
Collector Emitter Voltage
Emitter Collector Voltage
Min.
-40 to +85
-40 to +85
260
260
30
5
Unit
°C
V
P C
Power Dissipation
(3)
75
mW
Notes:
1. RMA flux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Derate power dissipation linearly 1.08 mW/°C above 25°C.
Electrical / Optical Characteristics
Values are at T A = 25°C unless specified otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
λ P
Θ
Peak Sensitivity Wavelength
Reception Angle
940
±12
nm
o
I CEO
BV CEO
BV ECO
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
V CE = 20 V,
E e = 0 mW/cm 2
I C = 100 μ A,
E e = 0 mW/cm 2
I E = 100 μ A,
E e = 0 mW/cm 2
30
5
100
nA
V
V
I C(ON)
V CE(SAT)
t r
t f
On-State Collector Current
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
V CE = 5 V,
E e = 1 mW/cm 2 ,
λ = 940 nm GaAs
I C = 2 mA,
E e = 1 mW/cm 2 ,
λ = 940 nm GaAs
V CE = 5 V, I C = 1 mA,
R L = 1000 Ω
1.0
1.5
15
15
0.4
mA
V
μ s
μ s
? 2005 Fairchild Semiconductor Corporation
QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0
2
www.fairchildsemi.com
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