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参数资料
| 型号： | R0633YS10D |
| 厂商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 1269 A, 1000 V, SCR |
| 封装： | 101A335, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 349K |
| 代理商： | R0633YS10D |
WESTCODE Positive development in power electronics
R0663YS10x to R0633YS12x
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2
Page 2 of 12
June, 2001
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
1.85
ITM=1000A
V
V0
Threshold voltage
-
1.25
V
rS
Slope resistance
-
0.614
m
dv/dt
Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, linear ramp
V/
s
IDRM
Peak off-state current
-
60
Rated VDRM
mA
IRRM
Peak reverse current
-
60
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
Tj=25°C
V
IGT
Gate trigger current
-
200
Tj=25°C
VD=10V, IT=3A
mA
IH
Holding current
-
1000
Tj=25°C
mA
Qrr
Recovered charge
-
125
-
C
Qra
Recovered charge, 50% Chord
-
85
100
C
Irm
Reverse recovery current
-
65
-
A
trr
Reverse recovery time
-
2.25
-
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V
s
--
28
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/s
tq
Turn-off time
20
-
30
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/s
s
-
0.050 Double side cooled
K/W
Rth(j-hs) Thermal resistance, junction to heatsink
-
0.10
Single side cooled
K/W
F
Mounting force
5.5
-
10
kN
Wt
Weight
-
90
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Introduction
The R0633 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium current, medium frequency applications.
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