参数资料
型号: R1LP0408CSP-5SC
厂商: Renesas Technology Corp.
英文描述: 4M SRAM (512-kword 】 8-bit)
中文描述: 4分的SRAM(512 - KWord的】8位)
文件页数: 12/14页
文件大小: 94K
代理商: R1LP0408CSP-5SC
R1LP0408C-C Series
Rev.2.00, May.26.2004, page 7 of 12
AC Characteristics
(Ta =
20 to +70°C, V
CC = 5 V
± 10%, unless otherwise noted.)
Test Conditions
Input pulse levels: V
IL = 0.4 V, VIH = 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: 1 TTL Gate + C
L (50 pF) (R1LP0408C-5SC)
1 TTL Gate + CL (100 pF) (R1LP0408C-7LC)
(Including scope and jig)
Read Cycle
R1LP0408C-C
-5SC
-7LC
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
55
70
ns
Address access time
tAA
55
70
ns
Chip select access time
tCO
55
70
ns
Output enable to output valid
tOE
25
35
ns
Chip select to output in low-Z
tLZ
10
10
ns
2
Output enable to output in low-Z
tOLZ
5
5
ns
2
Chip deselect to output in high-Z
tHZ
0
20
0
25
ns
1, 2
Output disable to output in high-Z
tOHZ
0
20
0
25
ns
1, 2
Output hold from address change
tOH
10
10
ns
相关PDF资料
PDF描述
R1LP0408CSP-7LC 4M SRAM (512-kword 】 8-bit)
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R1RP0416D 4M High Speed SRAM (256-kword X 16-bit)
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相关代理商/技术参数
参数描述
R1LP0408CSP-5SC#B0 功能描述:IC SRAM 4MBIT 55NS 32SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
R1LP0408CSP5SC#S0 制造商:Renesas Electronics Corporation 功能描述:
R1LP0408CSP-5SC#S0 功能描述:IC SRAM 4MBIT 55NS 32SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
R1LP0408CSP-5SCB0 制造商:Renesas Electronics Corporation 功能描述:SRAM,Low Power,4Mb, x8, 55ns
R1LP0408CSP-5SI 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin SOP 制造商:Renesas Electronics Corporation 功能描述:SRAM 4MBIT 5V 55NS 32SOP 制造商:Renesas Electronics Corporation 功能描述:SRAM, 4MBIT, 5V, 55NS, 32SOP 制造商:Renesas Electronics Corporation 功能描述:SRAM, 4MBIT, 5V, 55NS, 32SOP; Memory Size:4Mbit; Memory Configuration:512K x 8bit; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:SOP; No. of Pins:32; Access Time:55ns; Operating Temperature Min:-40C; Operating ;RoHS Compliant: Yes